A new technical paper titled “Novel STI Technology for Enhancing Reliability of High-k/Metal Gate DRAM” was published by researchers at Sungkyunkwan University and Samsung Electronics. “The challenges ...
The performance potential of SiC is indisputable. The key challenge to be mastered is to determine which design approach achieves the biggest success in applications. Advanced design activities are ...
The impact of materials on designing reliable devices. How packaging plays an important role in SiC MOSFET design. Determining the FIT rate for SiC MOSFETs. There’s no doubt that the material ...
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