Over the recent weeks here at Hackaday, we’ve been taking a look at the humble transistor. In a series whose impetus came from a friend musing upon his students arriving with highly developed ...

Many PWM (pulse-width-modulated) applications, such as Class D audio amplifiers, require symmetric drive circuitry. Comprising complementary N- and P-channel FET devices with gates and sources ...

Determine VGS and VDS for the E-MOSFET circuit in the figure. Assume this particular MOSFET has minimum values of ID(on) = 200mA at VGS = 4V and VGS(th) = 2V. We then calculate ID for VGS = 3.13V.

Despite recent improvements in the performance of RF LDMOS field-effect transistors (FETs), temperature drift and aging continue to affect the efficiency and linearization of power amplifiers using ...

In this eGaN FET-silicon power shoot-out series article, we examine RF performance using the 200 V EPC2012 [3] eGaN FET as a starting point. The eGaN FET is optimized as a power-switching device but ...