Researchers have developed a highly efficient organic bipolar transistor. The work opens up new perspectives for organic electronics -- both in data processing and transmission, as well as in medical ...
Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...
This series of articles reviews basic concepts, and is intended for hardware and software engineers working with embedded systems. In previous sessions we covered some of the fundamental electronic ...
The invention of the transistor in 1947 by Shockley, Bardeen and Brattain at Bell Laboratories ushered in the age of microelectronics and revolutionized our lives. First, so-called bipolar transistors ...
New technical paper titled “Organic bipolar transistors” from researchers at Technische Universität Dresden, NanoP, Technische Hochschule Mittelhessen, University of Applied Science, and ALBA ...
Diodes has expanded its series of automotive-compliant bipolar transistors with 12 NPN and PNP devices designed to achieve ultra-low V CE(sat). With a saturation voltage of just 17 mV at 1 A and ...
A transistor – a word blend of "transfer" and "resistor" – is a fundamental component of today's advanced electronics. Essentially, a transistor, as one of the foundational elements of modern ...
Recently in material science news from China we hear that [Hailin Peng] and his team at Peking University just made the world’s fastest transistor and it’s not made of silicon. Before we tell you ...
Bipolar transistors, essential components in a myriad of electronic devices, are highly susceptible to the adverse impacts of radiation. Ionising radiation introduces defects within the semiconductor ...
The first transistor was successfully demonstrated at Bell Laboratories in Murray Hill, New Jersey, in 1947. This three-terminal device has spawned many of the electronics devices that make possible ...
Recently in material science news from China we hear that [Hailin Peng] and his team at Peking University just made the world’s fastest transistor and it’s not made of silicon. Before we tell you ...
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