Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today’s VLSI circuits, although the device geometry, voltage and current levels are significantly ...

This video explains the MOSFET (metal–oxide–semiconductor field‑effect transistor). By Mehdi Sadaghdar Timestamps: 0:00 Intro ...

It has been five years since I started working in the semiconductor industry. I relearned the basics of transistors and felt ...

This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs. The ...

In 1947, a research team at Bell Laboratories invented a solid-state device whose resistance between two output terminals could be controlled by a third input terminal. This three-terminal device was ...

Power MOSFETs (Metal-Oxide Semiconductor Field Effect Transistors) are three-terminal silicon devices that function by applying a signal to the gate that controls current conduction between source and ...

The first transistor was successfully demonstrated at Bell Laboratories in Murray Hill, New Jersey, in 1947. This three-terminal device has spawned many of the electronics devices that make possible ...