Abstract: A self-aligned (SA) staggered structure for amorphous-In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) is proposed. The bottom contact between n+-IGZO and source/drain (S/D) enables larger ...
Departamento de Física Aplicada, Universidad de Cantabria, Avda. Los Castros, s/n, 39005 Santander, Spain Nanomedicine Group, Universidad de Cantabria─IDIVAL, Herrera Oria s/n, 39011 Santander, Spain ...
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